Plzt energy storage film

What is the energy storage density of plzt-0.12 films?

The PLZT-0.12 films possess the slim hysteresis loops and high breakdown strength, thus gaining the high energy storage density of 30.2 J/cm 3 and energy storage efficiency of 62.2%. Our results demonstrated that the introduction of stress by doping La elements could effectively enhance the energy storage density.

Why are plzt-0.2 films a good choice for energy storage?

PLZT-0.2 films have the low dielectric constant and high leakage current, resulting in the low breakdown field strength ( Table 1 ). Based on the above discussion, PLZT-0.12 films obtain the slim hysteresis loop and high breakdown field strength, which is conducive to enhancing the energy storage density.

Do plzt-0.12 films maintain hysteresis loops at different temperatures?

It is found that the electric hysteresis loop of the PLZT-0.12 films maintain slim loops at different temperatures, and the energy storage density and energy storage efficiency fluctuate in a narrow range, indicating that the PLZT-0.12 films obtain excellent temperature stability. Fig. 11.

Can plzt-0.12 compositing improve energy storage performance?

However, it is still lower than the literatures with multi-element doping or compositing , , , , , indicating that further improvement in the energy storage performance of the PLZT-0.12 film could be achieved by compositing other materials or optimizing the process.

Do ferroelectric PLZT films have a compressive residual stress?

Therefore, it is beneficial to have a compressive residual stress in ferroelectric PLZT films for applications that require high field strength. Figure 8 a shows the P–E hysteresis loops of PLZT/LNO/Ni measured at room temperature with maximum applied voltages of 700, 800, and 900 V.

How to improve WREC in plzt-0.12 films?

The reduced grain size and phase transition field difference help improve the Wrec. The Wrec reaches the maximum value 30.2 J/cm 3 in the PLZT-0.12 films. The Pb 1–1.5x La x Zr 0.95 Ti 0.05 O 3 films with different La 3+ contents were successfully prepared on the LaNiO 3 /SiO 2 /Si substrates by sol-gel method.