About Silicon based energy storage capacitor selection
With the rapid development of advanced electronic devices towards miniaturization and integration, silicon integrated lead-free ferroelectric film capacitors have attracted extensive attention due to th.
••The epitaxial growth of BaZr0.15Ti0.85O3 thin films on Si was realized.
As the world runs out of non-renewable energy, the demand for renewable energy is increasing. How to achieve efficient energy storage becomes one of the biggest technological cha.
The epitaxial buffer layers of Y2O3-stabilized ZrO2 (Y), CeO2 (C) and La0.67Sr0.33MnO3 (L) were deposited on Si (0 0 1) substrate at 1000 °C, 1000 °C and 900 °C respectiv.
The heterostructure sketches of the BZT15 films with and without buffer layers growing on Si (0 0 1) substrate are shown in Fig. 1a. Fig. 1b displays the typical results of XRD θ–2θ scans for th.
In conclusion, we have proposed an effective multi-strategy approach combining interface designing with thermal management to optimize the energy storage performa.
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